This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 10¹⁶ atoms/cm³ and 1 × 10²⁰ atoms/cm³, and to crater depths of 50 nm or deeper.