Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

BS EN 62417:2010 Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

BS EN 62417 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.

It is applicable to both active and parasitic field effect transistors.

The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Contents of BS EN 62417:

Scope

2 Abbreviations and letter symbols

3 General description

4 Test equipment

5 Test structures

6 Sample size

7 Conditions

8 Procedure

8.1 Bias temperature stress

8.2 Voltage sweep

9 Criteria

10 Reporting